FDS8333C - MOSFET N/P-CH 30V 8SOIC
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Manufacturer:
ON Semiconductor
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FET Type:
N and P-Channel
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
4.1A, 3.4A
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Rds On (Max) @ Id, Vgs:
80mOhm @ 4.1A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
6.6nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
282pF @ 10V
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Power - Max:
900mW
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154