FDN360P - MOSFET P-CH 30V 2A SSOT3
-
Manufacturer:
ON Semiconductor
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
80mOhm @ 2A, 10V
-
Vgs(th) (Max) @ Id:
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
298pF @ 15V
-
Power Dissipation (Max):
500mW (Ta)
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-236-3, SC-59, SOT-23-3