DMN10H099SK3-13 - MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC
DMN10H099SK3-13
6.500đ
Còn hàng
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3627
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Manufacturer:
Diodes Incorporated
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
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Rds On (Max) @ Id, Vgs:
80mOhm @ 3.3A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
25.2nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1172pF @ 50V
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Power Dissipation (Max):
34W (Tc)
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63